Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |
| Current Drain (Id) - Max | 10 mA |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Power - Max | 100 mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| Pd - Power Dissipation | 100mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 4pF |
| Drain Current (Idss) | 3mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 800mV |
| Reverse Transfer Capacitance (Crss) | 1.1pF |
| Packaging | SOT-883-3 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.006g |
Features
- Small IGSS: max -1.0nA (VGS = -20V, VDS = 0V)
- Small Ciss: typ 4pF (ΔVDS = 10V, VGS = 0V, f = 1MHz)
- Ultrasmall package facilitates miniaturization in end products
- Halogen free compliance
Applications
- Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications
In-Stock Suppliers
NoyanElectronic
67 in stock
Supplier Part Number: NYE_TF412ST5G
5 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 5+ | $0.1197 | 33,240 تومان |
| 50+ | $0.094 | 26,100 تومان |
| 150+ | $0.0831 | 23,070 تومان |
| 500+ | $0.0694 | 19,270 تومان |
| 2500+ | $0.0633 | 17,580 تومان |
| 5000+ | $0.0596 | 16,550 تومان |
Qty in reel: 8000pcs/reel
