Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Operating Temperature | -55℃~+150℃ |
| grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Voltage - Rated | 25 V |
| Technology | JFET |
| Configuration | N-Channel |
| Pd - Power Dissipation | 225mW |
| Number | 1 N-channel |
| Drain Current (Idss) | 60mA |
| Gate-Source Cutoff Voltage (VGS(off)) | 2V;6.5V |
| Gain | 12dB |
| Current Rating (Amps) | 60mA |
| Current - Test | 10 mA |
| Voltage - Test | 10 V |
| Packaging | SOT-23 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.015g |
Features
- Drain and Source are Interchangeable
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
