Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 800 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Technology | SiCFET (Cascode SiCJFET) |
| Gate Charge(Qg) | 37.8nC |
| Current - Continuous Drain (Id) @ 25°C | 27.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 217W (Tc) |
| Packaging | TO-247-3 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
The UF4C120070K3S is a 1200V, 72mΩ G4 series SiC FET. Based on a unique cascode circuit configuration, it co-packages a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling it to serve as a drop-in replacement for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO247-3 package, the device offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance R_DS(on): 72 mΩ
- Maximum operating temperature: 175 ℃
- Excellent reverse recovery characteristics: Q_rr = 72 nC
- Low body diode forward voltage V_FSD: 1.43 V
- Low gate charge: Q_G = 37.8 nC
- Threshold voltage V_G(th): 4.8 V (typical), supports 0 ~ 15 V gate drive
- Low intrinsic capacitance
- ESD protection: Human Body Model Class 2 and Charged Device Model Class C3
- Lead-free, halogen-free, RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
