| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 900 µA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 10 nA |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Drain Current (Idss) | 4.5mA |
| Packaging | SOT-23 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.015g |
This device is designed primarily for low level audio and general-purpose applications with high impedance signal sources. Sourced from process 52.
| QTY | USD | TOMAN |
|---|---|---|
| 5+ | $0.1114 | 30,930 تومان |
| 50+ | $0.09 | 24,990 تومان |
| 150+ | $0.0809 | 22,460 تومان |
| 500+ | $0.0696 | 19,320 تومان |
| 3000+ | $0.0598 | 16,600 تومان |
| 6000+ | $0.0567 | 15,740 تومان |