| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Technology | SiCFET (Cascode SiCJFET) |
| Gate Charge(Qg) | 51nC |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Vgs (Max) | ±25V |
| Power Dissipation (Max) | 190W (Tc) |
| Packaging | TO-220-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 1.34g |
This SiC FET device is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET and a Si MOSFET are co-packaged to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling it to serve as a true "drop-in replacement" for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO220-3 package, the device offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads when used with the recommended RC snubber circuit, as well as any application requiring standard gate drive.