Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Current - Drain (Idss) @ Vds (Vgs=0) | 300 µA @ 1.2 kV |
| Current Drain (Id) - Max | 120 A |
| Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 800V |
| Resistance - RDS(On) | 11 mOhms |
| Power - Max | 789 W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| grade | Automotive |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4 |
| Packaging | TO-247-4 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
This device is a 1200V, 7.1mΩ high-performance third-generation normally-on silicon carbide JFET transistor. It delivers extremely low on-resistance in a TO247-4 package, making it an ideal choice for addressing the stringent thermal constraints in solid-state circuit breaker and relay applications. Furthermore, JFET is a robust device technology capable of meeting the high-energy switching demands required by circuit protection applications.
Features
- Single-digit on-resistance
- Operating temperature: 175℃ (Max)
- High pulse current capability
- Excellent device ruggedness
- Silver sintered die attach for superior thermal resistance
- Lead-free, halogen-free, and RoHS compliant
Applications
- Solid-state/semiconductor circuit breakers
- Solid-state/semiconductor relays
- Battery disconnect devices
- Surge protection
- Inrush current control
- Induction heating
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_UF3N120007K4S
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $33.88 | 9,406,920 تومان |
| 10+ | $32.7 | 9,079,290 تومان |
Qty in reel: 600pcs/reel
