Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Technology | SiCFET (Cascode SiCJFET) |
| Gate Charge(Qg) | 51nC |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Vgs (Max) | ±25V |
| Power Dissipation (Max) | 190W (Tc) |
| Packaging | TO-247-3 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling true drop-in replacement for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si super-junction devices. Housed in a TO247-3 package, the device offers ultra-low gate charge and excellent reverse recovery characteristics, making it ideally suited for switching inductive loads and any application requiring standard gate drive.
Features
- Typical on-resistance R<sub>DS(on),typ</sub>: 80 mΩ
- Maximum operating temperature: 175℃
- Excellent reverse recovery characteristics
- Low gate charge
- Low intrinsic capacitance
- ESD protection: HBM Class 2
- Lead-free, halogen-free, RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
