Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| RDS(on) | 18Ω |
| Pd - Power Dissipation | 460mW |
| Number | 1 N-channel |
| Drain Current (Idss) | 10mA |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 4V |
| Packaging | SOT-23-3 |
| Weight | 0.0195g |
Features
- This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory
- Sourced from Process 58
- This is a Pb-Free Device
In-Stock Suppliers
NoyanElectronic
393 in stock
Supplier Part Number: NYE_MMBFJ110
5 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 5+ | $0.1603 | 44,510 تومان |
| 50+ | $0.1275 | 35,400 تومان |
| 150+ | $0.1134 | 31,490 تومان |
| 500+ | $0.0959 | 26,630 تومان |
| 3000+ | $0.0881 | 24,460 تومان |
| 6000+ | $0.0834 | 23,160 تومان |
Qty in reel: 3000pcs/reel
