| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | SiCFET (Cascode SiCJFET) |
| Gate Charge(Qg) | 51nC |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 50A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Vgs (Max) | ±25V |
| Power Dissipation (Max) | 242W (Tc) |
| Packaging | D2PAK |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.93g |
This SiC FET device is based on a unique "cascode" circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling it to serve as a true "drop-in replacement" for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Offered in a D2PAK-3 package, this device exhibits ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.