| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 650 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current Drain (Id) - Max | 32 A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 100V |
| Resistance - RDS(On) | 95 mOhms |
| Power - Max | 190 W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Gate Charge(Qg) | 75nC |
| Packaging | TO-247-3 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 4.295g |
onsemi offers high-performance G3 silicon carbide normally-on JFET transistors. This series features ultra-low on-resistance RDS(ON) and gate charge QG, enabling low conduction and switching losses. The devices exhibit normally-on characteristics with low RDS(ON) at VGS = 0 V, making them well-suited for current protection circuits requiring no active control, as well as cascode operation.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $8.54 | 2,371,170 تومان |
| 10+ | $8.28 | 2,298,980 تومان |