Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4 |
| Technology | SiCFET (Cascode SiCJFET) |
| Gate Charge(Qg) | 43nC |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Vgs (Max) | ±25V |
| Power Dissipation (Max) | 254.2W (Tc) |
| Packaging | TO-247-4 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
The cascode products use co-packaging technology to integrate high-performance F3-series SiC fast JFETs with cascode-optimized MOSFETs, forming SiC devices with standard gate drive currently available on the market. These devices feature a 4-terminal TO-247 package, extremely fast switching speeds, and best-in-class reverse recovery characteristics among devices with equivalent ratings. They are ideal for switching inductive loads and any application requiring standard gate drive.
Features
- Typical on-resistance RDS(on)typ of 80 mΩ
- Maximum operating temperature of 175°C
- Excellent reverse recovery characteristics
- Low gate charge
- Low intrinsic capacitance
- ESD protection compliant with HBM Class 2
- TO247-4 package for faster switching speed and cleaner gate waveform
- Lead-free, halogen-free, RoHS compliant
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
