| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200 µA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id | 300 mV @ 10 nA |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Drain Current (Idss) | 1mA |
| Gate-Source Breakdown Voltage (Vgss) | 40V |
| Gate-Source Cutoff Voltage (VGS(off)) | 300mV |
| Packaging | SOT-23-3L |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.015g |
This device is designed primarily for low level audio and general-purpose applications with high impedance signal sources. Sourced from process 52.
| QTY | USD | TOMAN |
|---|---|---|
| 5+ | $0.0691 | 19,190 تومان |
| 50+ | $0.054 | 14,990 تومان |
| 150+ | $0.0475 | 13,190 تومان |
| 500+ | $0.0394 | 10,940 تومان |
| 3000+ | $0.0349 | 9,690 تومان |
| 6000+ | $0.0328 | 9,110 تومان |