نیمه‌هادی‌ گسسته ماژول‌ درایور قدرت

Product Attributes

Introduction

The FBS-GAM02-P-C50 multi-function power module integrates eGaN switching power HEMTs and can serve as a non-flight development platform or as a standalone, fully functional industrial-grade device. The module incorporates two 100V-rated output power switches, two high-speed gate drive circuits, two power Schottky diode clamp elements with shoot-through prevention logic, and a +5 VDC gate drive bias "power good" monitoring circuit — all integrated in an innovative, space-saving 18-pin SMT molded epoxy package. This device is commercial-grade rated EAR-99.

Features

• 50 VDC/10 A full-rated device
• Integrated output eGaN power HEMT
• Four possible configurations: single low-side gate driver, single high-side gate driver, independent low-side and high-side gate drivers, half-bridge gate driver with input shoot-through protection
• Internal shoot-through protection
• Internal power-good circuit
• High-speed switching capability: 1.0+ MHz
• Robust compact molded SMT package
• "Pillar" input/output pads
• eGaN HEMT switching element
• Commercial rating EAR-99

Applications

• Power switches/actuators
• Single-phase and multi-phase motor phase drivers
• Point-of-load building blocks
• High-speed DC-DC conversion
• Development platforms