نیمه‌هادی‌ گسسته ماژول‌ درایور قدرت

Product Attributes

Introduction

This GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5×6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency. GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.

Features

• Monolithically-integrated gate drive
• Wide logic input range range with hysteresis
• 5 V / 15 V input-compatible
• Wide VCC range (10 to 30 V)
• Programmable turn-on dV/dt
• 200 V/ns dV/dt immunity
• 800 V Transient Voltage Rating
• 650 V Continuous Voltage Rating
• Low 170 mΩ resistance
• Zero reverse recovery charge
• ESD protection - 2 kV (HBM), 1 kV (CDM)
• 2 MHz operation
• Small, low-profile SMT QFN
• 6×8 mm footprint, 0.85 mm profile
• Minimized package inductance
• RoHS, Pb-free, REACH-compliant
• Up to 40% energy savings vs Si solutions
• System level 4kg CO2 Carbon Footprint reduction

Applications

• AC-DC, DC-DC, DC-AC
• QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D
• Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Telecom