نیمه‌هادی‌ گسسته ماژول‌ درایور قدرت

NAVITAS NV6156

Manufacturer	Navitas
Mfr. Part Number	NV6156
Electland Part Code	146288
Electland Part Number	NYE_NV6156
Category	Power Driver Modules
Description	Power Driver Module MOSFET Full Bridge 700 V 8 A 24-PowerVQFN
Datasheet	Download

Product Attributes

Category	Discrete Semiconductors Power Driver Modules
type	MOSFET
Configuration	Full Bridge
current	8 A
voltage	700 V
Mounting Type	Surface Mount
Package / Case	24-PowerVQFN
Voltage - Supply	700V
Features	Overcurrent Protection;Short-Circuit Protection;Over temperature protection;Under-voltage lockout
RDS(on)	170mΩ
Number of Channels	1
Operating Temperature -	-55℃~+150℃
Maximum Continuous Current	8A
Control Input Logic	Active High
Packaging	PQFN-24(5x6)
ReachStatus	REACH Unaffected
RohsStatus	Unknown
MoistureSensitivityLevel	3 (168 Hours)
ExportControlClassNumber	EAR99
HtsusCode	8542.39.0090
Weight	0.5g

Introduction

This GaNFast power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device. GaNSense enables integrated loss-less current sensing which eliminates external current sensing resistors and increases system efficiency. GaNSense also enables short circuit and over-temperature protection to increase system robustness, while auto-standby mode increases light, tiny & no-load efficiency. These GaN ICs combine the highest dV/dt immunity, high-speed integrated drive and industrystandard low-profile, low-inductance, SMT QFN packaging to enable designers to achieve simple, quick and reliable solutions. Navitas’ GaN IC technology extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC and other resonant converters to reach MHz+ frequencies with very high efficiencies and low EMI to achieve unprecedented power densities at a very attractive cost structure.

Features

Monolithically-integrated gate drive
Wide VCC range (10 to 30 V)
Programmable turn-on dV/dt
200 V/ns dV/dt immunity
800 V Transient Voltage Rating
700 V Continuous Voltage Rating
Low 170 mΩ resistance
Zero reverse recovery charge
2 MHz operation
Integrated loss-less current sensing
Short-circuit protection
Over-temperature protection
Autonomous low-current standby mode
Auto-standby mode input
5×6 mm footprint, 0.85 mm profile
Minimized package inductance
Large cooling pad
RoHS, Pb-free, REACH-compliant
Up to 40% energy savings vs Si solutions
System level 4kg CO2 Carbon Footprint reduction

Applications

AC-DC, DC-DC, DC-AC
QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D
Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Telecom