حفاظت مدار وریستور (ام او وی)

Product Attributes

Introduction

Thanks to the adoption of advanced material technology, it has excellent ESD suppression capability. It has high electrostatic resistance and meets the Class 4 standard of IEC61000 - 4 - 2. The non - polar (bipolar) design facilitates the replacement of Zener diodes. It can replace two Zener diodes and one capacitor. It uses lead - free plated terminal electrodes and has excellent soldering performance. By adopting a multi - layer structure, a wide range of products are provided to meet various needs. The low - capacitance version is suitable for the DC voltage lines of high - speed buses. The ultra - low capacitance version is suitable for high - speed signal lines. Thanks to our original ultra - low capacitance technology, it is suitable for high - speed signal lines such as interfaces (e.g., USB 2.0, IEEE1394, HDMI, etc.). It complies with the RoHS standard.

Features

• Excellent ESD suppression due to original advanced material technology
• Having large electrostatic resistance meeting IEC61000-4-2, Level 4 standard
• Having no polarity (bipolar) facilitated replacing Zener Diodes. Capable of replacing 2 Zener Diodes and 1 Capacitor.
• Lead-free plating terminal electrodes enabling great solderability
• Wide range of products is available by adopting multilayer structure, meeting various needs.
• Low capacitance versions for DC voltage lines of high speed busses
• Ultra low capacitance for high speed signal line
• Applicable to high-speed signal lines, such as interfaces (e.g. USB 2.0, IEEE1394, HDMI, and so on), due to our original ultra-low capacitance technology.
• RoHS compliant
• Multilayer monolithic ceramic construction for high speed signal lines
• Ideal for USB 2.0, IEEE1394, and HDMI high speed data busses
• Applicable to high-speed signal lines, such as interfaces (e.g. USB 2.0, IEEE1394, HDMI, and so on), due to our original material technology and multilayer technology.
• Capacitance: 0.8 to 2.1 pF typ.
• Wide variety of products is available by adopting multilayer construction, which achieved wide range of usage, such as application to DC voltage lines and signal lines.
• Varistor voltage: 6.8 to 65 V [at 1 mA]
• Capacitance: 8.5 to 420 pF typ. [at 1 MHz]

Applications

• Mobile Phone