حفاظت مدار برق‌گیر گازی (جی دی تی)

Product Attributes

Features

• Compliant with ITU-T K.12, IEEE C62.31, and IEC 61643-311 GDT standard test methods.
• Impulse sparkover voltage defined as typical distribution values.
• Impulse lateral delay: 1000 V/µs, < 75 ns.
• Insulation resistance: 100 V (50 V for models 2036–07 and 2036-09), > 10¹⁰ Ω.
• DC sparkover voltage: 10 mA, ~ 70 V.
• Arc voltage: 1 A, ~ 10 V.
• Glow-to-arc transition current: < 0.5 A.
• Capacitance: 1 MHz, < 2 pF.
• DC holdover voltage: 135 V (52 V for models 2036-07 and 2036-09, 80 V for model 2036-15), < 150 ms.
• Impulse discharge current: 20000 A, 8/20 µs, minimum 1 operation; 10000 A, 8/20 µs, > 10 operations; 2000 A, 10/350 µs, 1 operation; 200 A, 10/1000 µs, > 300 operations; 200 A, 10/700 µs, > 500 operations.
• AC discharge current: 20 Arms, 11 cycles, 1 operation; 10 Arms, 1 s, > 10 operations.
• Storage temperature: -55 to +105 °C.
• Operating temperature: -55 to +105 °C.
• Climatic category (IEC 60068-1): 55/105/21.
• Moisture sensitivity level: 1.
• ESD classification (HBM): 6.
• Optional fail-short device available. This optional fail-short component activates at 215 °C – 217 °C, providing a highly conductive path to ground in the event of overheating. GDTs equipped with the optional fail-short device should be hand soldered below the fail-short mechanism activation temperature, or processed using selective soldering not exceeding 210 °C.