ارسال سریع به سراسر ایران پشتیبانی 24/7
XTX PN27G02ABGITG

مدار مجتمع (آی سی) آی‌سی حافظه تراشهٔ حافظه

XTX PN27G02ABGITG

Manufacturer XTX
Mfr. Part Number PN27G02ABGITG
Electland Part Code 1030627
Electland Part Number NYE_PN27G02ABGITG
Category Memory (ICs)
Description 2Gbit 2.7V~3.6V BGA-24(6x8) Memory (ICs) RoHS

Product Attributes

Category Integrated Circuits (ICs) Memory Memory (ICs)
Operating Temperature -40℃~+85℃
Voltage - Supply 2.7V~3.6V
Features Read buffer function;Copy back write function;Software reset function;ECC error correction function;Hardware write protection function;Power lock protection function
Memory Size 2Gbit
Data Retention - TDR (Year) 10 years
Block Erase Time(tBE) 3.5ms
Write Cycle Time(tWC) 25ns
Page Programming Time (Tpp) 300us
Standby Supply Current 50uA
Packaging BGA-24(6x8)
Weight 0.04g

Introduction

The PN27G02A is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+128) bytes x 64 pages x 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes x 64 pages). The PN27G02A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

Features

  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/544Bytes
  • Power Supply Voltage Voltage range: 2.7V ~ 3.6V
  • Organization Page size: x8 <2048+128> bytes; 128 - bytes spare area
  • Block size: x8 <128k+8k> bytes
  • Plane size: 1024 Blocks per Plane 2008 block (min) ~ 2048 block (max)
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
  • Access time Cell array to register: 25μs (max)
  • Serial Read Cycle: 25 ns (min) (CL = 50pF)
  • Program/Erase time Auto Page Program: 300 μs /page (typ.)
  • Auto Block Erase: 3.5 ms/block( typ.)
  • Reliability 10 Year Data retention (Typ)

Applications

  • solid-state file storage
  • voice recording
  • image file memory for still cameras
  • other systems which require high-density non-volatile memory data storage

In-Stock Suppliers

NoyanElectronic
9 in stock
Supplier Part Number: NYE_PN27G02ABGITG

1 1
QTY USD TOMAN
1+$6.831,896,380 تومان
10+$6.511,807,530 تومان
30+$5.951,652,040 تومان
100+$5.461,515,990 تومان

Qty in reel: 377pcs/reel