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Product Attributes

Introduction

The P25T22H/12H is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. Specifically designed for use in many different systems, the device supports read, program, and erase operations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programming and erasing.

Features

• Wide Supply Range from 2.3 to 3.6V for Read, Erase and Program
• Ultra Low Power consumption for Read, Erase and Program
• X1, X2 Multi I/O Support
• High reliability with 100K cycling and 20 Year-retention
• Single 2.3V to 3.60V supply
• Industrial Temperature Range -40C to 85C
• Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
• Single, Dual IO mode 2M/1M x 1 bit 1M/512K x 2 bits
• Flexible Architecture for Code and Data Storage
• Uniform 256-byte Page Program
• Uniform 256-byte Page Erase
• Uniform 4K-byte Sector Erase
• Uniform 32K/64K-byte Block Erase
• Full Chip Erase
• Hardware Controlled Locking of Protected Sectors by WP
• 2ms Page program time
• 8ms Page erase time
• 8ms 4K-byte sector erase time
• 8ms 32K-byte block erase time
• 8ms 64K-byte block erase time
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Ultra Low Power Consumption
• 0.2uA Typical Deep Power Down current @3.0V
• 9uA Typical Standby current @3.0V
• 0.8mA Active Read current at 33MHz
• 2.0mA Active Program or Erase current
• High Reliability 100,000 Program / Erase Cycles
• 20-year Data Retention
• Industry Standard Green Package Options 8-pin SOP (150mil/208mil)/TSSOP 8-land USON (3x2x0.55mm) KGD for SiP