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MICROCHIP SST25VF016B-50-4I-S2AF-T

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MICROCHIP SST25VF016B-50-4I-S2AF-T

Manufacturer MICROCHIP
Mfr. Part Number SST25VF016B-50-4I-S2AF-T
Electland Part Code 1030083
Electland Part Number NYE_SST25VF016B-50-4I-S2AF-T
Category Memory (ICs)
Description FLASH Memory IC 16Mbit SPI 50 MHz 8-SOIC

Product Attributes

Category Integrated Circuits (ICs) Memory Memory (ICs)
Package / Case 8-SOIC (0.209", 5.30mm Width)
Mounting Type Surface Mount
Operating Temperature -40℃~+85℃
Technology FLASH
Voltage - Supply 2.7V~3.6V
interface SPI
Features Write enable latch;Software write protection
Clock Frequency 50MHz
Memory Size 16Mbit
Data Retention - TDR (Year) 100 Years
Supplier Device Package 8-SOIC
Memory Type Non-Volatile
Memory Format FLASH
Memory Organization 2M x 8
Memory Interface SPI
Write Cycle Time - Word, Page 10µs
Program / Erase Cycles 100,000 cycles
Block Erase Time(tBE) 18ms
Standby Supply Current 5uA
Packaging SOIC-8-208mil
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 3 (168 Hours)
ExportControlClassNumber EAR99
HtsusCode 8542.32.0071
Weight 0.2055g

Introduction

The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF016B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

SST25VF016B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7 - 3.6V for SST25VF016B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

Features

  • Single Voltage Read and Write Operations - 2.7 - 3.6V
  • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3
  • High Speed Clock Frequency - Up to 50 MHz
  • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
  • Low Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 μA (typical)
  • Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Uniform 64 KByte overlay blocks
  • Fast Erase and Byte-Program: - Chip-Erase Time: 35 ms (typical) - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 µs (typical)
  • Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations
  • End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode
  • Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register
  • Software Write Protection - Write protection through Block-Protection bits in status register
  • Temperature Range - Commercial: 0℃ to +70℃ - Industrial: -40℃ to +85℃
  • Packages Available - 8-lead SOIC (200 mils) - 8-contact WSON (6 mmx5 mm)
  • All devices are RoHS compliant

In-Stock Suppliers

NoyanElectronic
0 in stock
Supplier Part Number: NYE_SST25VF016B-50-4I-S2AF-T

1 1
QTY USD TOMAN
1+$1.32366,500 تومان
10+$1.12310,970 تومان
30+$0.9967276,740 تومان
100+$0.869241,280 تومان
500+$0.811225,180 تومان
1000+$0.7861218,260 تومان

Qty in reel: 2100pcs/reel