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Product Attributes

Introduction

The TC58NVG0S3HTA00 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages). The TC58NVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

Features

• Organization
  • x8 Memory cell array 2176 × 64K × 8
  • Register 2176 × 8
  • Page size 2176 bytes
  • Block size (128K + 8K) bytes
  • Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Mode control: Serial input/output
  • Command control
• Number of valid blocks: Min 1004 blocks, Max 1024 blocks
• Power supply: VCC = 2.7V to 3.6V
• Access time: Cell array to register 25 µs max, Read Cycle Time 25 ns min (CL = 50pF)
• Program/Erase time: Auto Page Program 300 µs/page typ., Auto Block Erase 2.5 ms/block typ.
• Operating current: Read (25 ns cycle) 30 mA max., Program (avg.) 30 mA max, Erase (avg.) 30 mA max, Standby 50 µA max
• Package: TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
• 8 bit ECC for each 512Byte is required.

Applications

• solid-state file storage
• voice recording
• image file memory for still cameras
• other systems which require high-density non-volatile memory data storage