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ST M34E02-FDW6TP

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ST M34E02-FDW6TP

Manufacturer ST
Mfr. Part Number M34E02-FDW6TP
Electland Part Code 1030031
Electland Part Number NYE_M34E02-FDW6TP
Category Memory (ICs)
Description EEPROM Memory IC 2Kbit I2C 400 kHz 900 ns 8-TSSOP
Datasheet Download

Product Attributes

Category Integrated Circuits (ICs) Memory Memory (ICs)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Mounting Type Surface Mount
Operating Temperature -40℃~+85℃
Technology EEPROM
Voltage - Supply 1.7V~5.5V;3mA
interface I2C
Features Hardware write protection function;Software write protection function;Built-in power-on reset (POR);Noise suppression function
Clock Frequency 400kHz
Memory Size 2Kbit
Data Retention - TDR (Year) 40 Years
Write Cycle Endurance 1,000,000 cycles
Supplier Device Package 8-TSSOP
Memory Type Non-Volatile
Memory Format EEPROM
Memory Organization 256 x 8
Memory Interface I2C
Write Cycle Time - Word, Page 5ms
Access Time 900ns
Write Cycle Time(tWC) 5ms
Standby Supply Current 3uA
Packaging TSSOP-8
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber EAR99
HtsusCode 8542.32.0051
Weight 0.0735g

Introduction

The M34E02-F is a 2-Kbit |²C -compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 256x8 bits. The M34E02-F can be accessed with a supply voltage from 1.7 V to 5.5 V and operates with a clock frequency of 400 kHz (or less), over an ambient temperature range of -40 ℃ / +85 ℃. The M34E02-F is able to lock permanently the data in its first half (from location 00h to 7Fh). This facility has been designed specifically for use in DRAM DIMMs (dual interline memory modules) with serial presence detect (SPD). All the information concerning the DDR1, DDR2 or DDR3 configuration of the DRAM module (such as its access speed, size and organization) can be kept write-protected in the first half of the memory. The first half of the memory area can be write-protected using two different software write protection mechanisms. By sending the device a specific sequence, the first 128 bytes of the memory become write protected: permanently or resettable. In addition, the devices allow the entire memory area to be write protected, using the WC input (for example by tieing this input to VCC). These |²C -compatible electrically erasable programmable memory (EEPROM) devices are organized as 256x8 bits. |²C uses a two wire serial interface, comprising a bi-directional data line and a clock line. The devices carry a built-in 4-bit device type identifier code (1010) in accordance with the |²C bus definition to access the memory area and a second device type identifier code (0110) to define the protection. These codes are used together with the voltage level applied on the three chip enable inputs (E2, E1, E0). The devices behave as a slave device in the |²C protocol, with all memory operations synch

Features

  • 2-Kbit EEPROM for DDR1, DDR2 and DDR3 serial presence detect
  • Backward compatible with the M34C02
  • Permanent and reversible software data protection for lower 128 bytes
  • 100 kHz and 400 kHz I²C bus serial interface
  • Single supply voltage: 1.7 V to 5.5 V
  • Byte and Page Write (up to 16 bytes)
  • Self-timed write cycle
  • Noise filtering – Schmitt trigger on bus inputs
  • Noise filter on bus inputs
  • Enhanced ESD/latch-up protection
  • More than 1 million erase/write cycles
  • More than 40 years’ data retention
  • ECOPACK (RoHS compliant) packages
  • Packages: ECOPACK2 (RoHS-compliant and Halogen-free)

Applications

  • For DDR1, DDR2, and DDR3 DRAM DIMMs with Serial Presence Detect (SPD), storing configuration information such as access speed, size, and organization of memory modules

In-Stock Suppliers

NoyanElectronic
4 in stock
Supplier Part Number: NYE_M34E02-FDW6TP

1 1
QTY USD TOMAN
1+$0.093525,960 تومان
10+$0.072720,190 تومان
30+$0.063717,690 تومان
100+$0.052514,580 تومان
500+$0.047513,190 تومان
1000+$0.044612,380 تومان

Qty in reel: 4000pcs/reel