مدار مجتمع (آی سی) آیسی حافظه تراشهٔ حافظه
KIOXIA TC58NYG0S3HBAI6
| Manufacturer | KIOXIA |
|---|---|
| Mfr. Part Number | TC58NYG0S3HBAI6 |
| Electland Part Code | 1030011 |
| Electland Part Number | |
| Category | Memory (ICs) |
| Description | FLASH - NAND (SLC) Memory IC 1Gbit Parallel 25 ns 67-VFBGA (6.5x8) |
Product Attributes
| Category | Integrated Circuits (ICs) Memory Memory (ICs) |
|---|---|
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40℃~+85℃ |
| Technology | FLASH - NAND (SLC) |
| Voltage - Supply | 1.7V~1.95V |
| interface | Parallel |
| Features | Read buffer function;Copy back write function;Software reset function;Hardware write protection function;ECC error correction function |
| Memory Size | 1Gbit |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Block Erase Time(tBE) | 3.5ms |
| Write Cycle Time(tWC) | 25ns |
| Page Programming Time (Tpp) | 25ns |
| Standby Supply Current | 50uA |
| Packaging | VFBGA-67 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 3 (168 Hours) |
| ExportControlClassNumber | 3A991B1A |
| HtsusCode | 8542.32.0071 |
| Weight | 0.1g |
Introduction
The TC58NYG0S3HBAI6 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM; organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages). The TC58NYG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features
- Organization x8 Memory cell array 2176 x 64K x 8
- Register 2176 x 8
- Page size 2176 bytes
- Block size (128K + 8K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
- Mode control Serial input/output Command control
- Number of valid blocks Min 1004 blocks Max 1024 blocks
- Power supply VCC = 1.7V to 1.95V
- Access time Cell array to register 25 μs max
- Read Cycle Time 25 ns min (CL = 30 pF)
- Program/Erase time Auto Page Program 300 μs/page typ.
- Auto Block Erase 3.5 ms/block typ.
- Operating current Read (25 ns cycle) 30 mA max
- Program (avg.) 30 mA max
- Erase (avg.) 30 mA max
- Standby 50 μA max
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
- 8 bit ECC for each 512Byte is required.
Applications
- solid-state file storage
- voice recording
- image file memory for still cameras
- other systems which require high-density non-volatile memory data storage
