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KIOXIA TH58BVG3S0HTA00

Manufacturer	KIOXIA
Mfr. Part Number	TH58BVG3S0HTA00
Electland Part Code	1028937
Electland Part Number	NYE_TH58BVG3S0HTA00
Category	Memory (ICs)
Description	FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 48-TSOP I

Product Attributes

Category	Integrated Circuits (ICs) Memory Memory (ICs)
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Mounting Type	Surface Mount
Operating Temperature	0℃~+70℃
Technology	FLASH - NAND (SLC)
Voltage - Supply	2.7V~3.6V
interface	Parallel
Features	Read buffer function;Copy back write function;Software reset function;ECC error correction function;Hardware write protection function
Memory Size	8Gbit
Supplier Device Package	48-TSOP I
Memory Type	Non-Volatile
Memory Format	FLASH
Memory Organization	1G x 8
Memory Interface	Parallel
Write Cycle Time - Word, Page	25ns
Access Time	25 ns
Block Erase Time(tBE)	2.5ms
Write Cycle Time(tWC)	25ns
Page Programming Time (Tpp)	25ns
Standby Supply Current	100uA
Packaging	TFSOP-48-18.4mm
Tariff Active	True
ReachStatus	REACH Unaffected
RohsStatus	ROHS3 Compliant
MoistureSensitivityLevel	3 (168 Hours)
ExportControlClassNumber	3A991B1A
HtsusCode	8542.32.0071
Weight	1.1535g

Introduction

TH58BVG3S0HTA00 is a single 3.3V, 8Gb (8,858,370,048 bits) NAND Flash EEPROM organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device features a 4224-byte static register that allows program and read data transfers between the register and the memory cell array in units of 4224 bytes. Erase operations are performed on a single block basis (256KB + 8KB: 4224 bytes × 64 pages). The device is a serial-type memory that utilizes I/O pins for address and data input/output as well as command input. Erase and program operations are executed automatically, making it well-suited for solid-state file storage, voice recording, still camera image file storage, and other systems requiring high-density non-volatile memory data storage. The TH58BVG3S0HTA00 incorporates on-chip ECC logic capable of internally correcting up to 8-bit read errors per 528 bytes.

Features

Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi-Page Read, Multi-Page Program, Multi-Block Erase, ECC Status Read
Mode Control: Serial I/O command control
Valid Block Count: 4016 blocks minimum, 4096 blocks maximum
Power Supply: VCC = 2.7 ~ 3.6 V
Access Time: Memory cell array to register 55 μs typical (single-page read) / 90 μs typical (multi-page read); read cycle time 25 ns minimum (CL = 50pF)
Program/Erase Time: Auto page program 340 μs/page typical; auto block erase 2.5 ms/block typical
Operating Current: Read (25 ns cycle) 30 mA maximum; Program (average) 30 mA maximum; Erase (average) 30 mA maximum; Standby 100 μA maximum
Package: TSOP I 48-P-1220-0.50 (weight: 0.54 g typical)
On-chip 8-bit ECC function per 528 bytes.