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Product Attributes

Introduction

The TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

Features

• Organization x8 Memory cell array 2112 x 64 K x 8 Register 2112 x 8 Page size 2112 bytes Block size (128 K + 4 K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read
• Mode control Serial input/output Command control
• Number of valid blocks Min 1004 blocks Max 1024 blocks
• Power supply VCC = 2.7 V to 3.6 V
• Access time Cell array to register 40 μs typ. Serial Read Cycle 25 ns min CL = 50 pF
• Program/Erase time Auto Page Program 330 μs/page typ. Auto Block Erase 2.5 ms/block typ.
• Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 μA max
• Package TSOP I 48 - P - 1220 - 0.50 (Weight: 0.53 g typ.)
• 8bit ECC for each 528Bytes is implemented on a chip.

Applications

• solid-state file storage
• voice recording
• image file memory for still cameras
• other systems which require high-density non-volatile memory data storage