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Product Attributes

Introduction

The XT27G01B is a single 3.3V 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 KB + 4 KB: 2112 bytes × 64 pages). The XT27G01B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The XT27G01B has ECC logic on the chip and 8-bit read errors for each 528 bytes can be corrected internally.

Features

• Single Level per Cell (SLC) Technology
• ECC requirement: 0 bit/528Bytes, with build-in ECC controller to implement 8bit/528Bytes internally
• Power Supply Voltage Voltage range: 2.7V ~ 3.6V
• Organization Page size: x8 (2048 + 64) bytes; 64 - bytes spare area Block size: x8 (228k + 4k) bytes 1004 block(min) ~ 1024 block(max)
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read
• Access time Cell array to register: 40μs (typ) Serial Read Cycle: 25 ns (min) (CL = 50pF)
• Program/Erase time Auto Page Program: 330 µs /page (typ.) Auto Block Erase: 3.5 ms /block( typ.)
• Reliability 10 Year Data retention (Typ)
• Moisture Sensitivity Level: MSL3
• Package 48 - pin TSOP (12 x 20mm) All Packages are RoHS Compliant and Halogen - free

Applications

• solid-state file storage
• voice recording
• image file memory for still cameras
• other systems which require high-density non-volatile memory data storage