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MK MKPV4G08IT-AFX

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MK MKPV4G08IT-AFX

Manufacturer MK
Mfr. Part Number MKPV4G08IT-AFX
Electland Part Code 1027519
Electland Part Number NYE_MKPV4G08IT-AFX
Category Memory (ICs)
Description 2.7V~3.6V 4Gbit TSOP-48 Memory (ICs) RoHS

Product Attributes

Category Integrated Circuits (ICs) Memory Memory (ICs)
Operating Temperature -40℃~+85℃
Voltage - Supply 2.7V~3.6V
Features Read buffer function;Copy back write function;Software reset function;ECC error correction function;Hardware write protection function
Memory Size 4Gbit
Block Erase Time(tBE) 2.5ms
Write Cycle Time(tWC) 25ns
Page Programming Time (Tpp) 300us
Standby Supply Current 50uA
Packaging TSOP-48
Weight 0.235g

Introduction

The MKPV4G08IT-AFX is a single 3.3V 4Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes x 64 pages x 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes x 64 pages). The MKPV4G08IT-AFX is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

Features

  • x8 Memory cell array 4352 x 128K x 8
  • Register 4352 x 8
  • Page size 4352 bytes
  • Block size (256K + 16K) bytes
  • Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
  • Mode control: Serial input/output Command control
  • Number of valid blocks: Min 2008 blocks Max 2048 blocks
  • Power supply: VCC = 2.7V to 3.6V
  • Access time: Cell array to register 25 μs max, Read Cycle Time 25 ns min (CL = 50 pF)
  • Program/Erase time: Auto Page Program 300 μs/page typ., Auto Block Erase 2.5 ms/block typ.
  • Operating current: Read (25 ns cycle) 30 mA max, Program (avg.) 30 mA max, Erase (avg.) 30 mA max, Standby 50 μA max
  • Package: TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
  • 8 bit ECC for each 512Byte is required.

Applications

  • solid-state file storage
  • voice recording
  • image file memory for still cameras
  • other systems which require high-density non-volatile memory data storage

In-Stock Suppliers

NoyanElectronic
193 in stock
Supplier Part Number: NYE_MKPV4G08IT-AFX

1 1
QTY USD TOMAN
1+$7.552,096,290 تومان
10+$7.222,004,660 تومان
30+$6.651,846,400 تومان
96+$6.151,707,570 تومان

Qty in reel: 96pcs/reel